| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can relax position precision of a cut pattern required in pattern formation using a 1D layout.SOLUTION: There is provided a method of manufacturing a semiconductor device that comprises: a first pattern formation process of forming a first film patterned into a first pattern including lines spaced from each other on a pattern formation object film at predetermined intervals and partially separated using a first cut mask; a process of forming a second film so as to cover a surface of the first film; and a second pattern formation process of forming a pattern formation object film patterned into a second pattern by separating parts of spaces of the first pattern using a second cut mask, the first cut mask having a plurality of opening parts in the same shape or a plurality of light shield parts in the same shape, and the second cut mask having a plurality of opening parts in the same shape or a plurality of light shield parts in the same shape.SELECTED DRAWING: Figure 1 |
