| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material having favorable solvent solubility and alkali solubility and giving a resist film with high sensitivity and resolution and excellent etching durability, and to provide a pattern forming method using the resist material. <P>SOLUTION: The resist material is prepared by adding fullerenes having a phenolic group expressed by general formula (1). In formula (1), R represents a hydrogen atom or a 1-4C alkyl group; each of R<SP>1</SP>to R<SP>5</SP>represents a hydrogen atom or an acid unstable group; and each of a, b, c, d and e is an integer of 0 to 2 satisfying 1≤a+b+c+d+e≤10. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
