| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist material that has excellent resolution and focus latitude, little changes in a line width or deterioration in a shape even for a long PED (post exposure delay) time, an excellent pattern profile after developed, high resolution, and no dimensional change in a pattern within a wafer plane due to uneven development, and in particular, that greatly exhibits effects in far-UV ray lithography, by incorporating a photo-acid initiator and a resin containing no acetal type acid unstable group, the solubility of which with an alkali developing solution varies by the effect of an acid. <P>SOLUTION: The chemically amplified positive resist material contains: (A) a resin having an acid unstable group except for an acetal type group and showing changes in the solubility with an alkali developing solution by the effect of an acid to eliminate the acid unstable group; and (B) a sulfonium salt expressed by formula (1a) and a sulfonium salt expressed by formula (1b). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
