| 摘要 |
1,246,704. Photo-sensitive materials. DOW CORNING CORP. March 27, 1969 [April 26, 1968], No. 16079/69. Heading G2C. A photo-resist material comprises a silicon dioxide layer coated with a photo-resist material and an alkoxy- or chloro-silane in an amount between 0.5 and 4% by weight based on the photoresist. Specified silanes are phenyl-, vinyl- and gamma-chloropropyl-trichlorosilane, allyl and vinyl trimethoxysilene, and gamma-methacryloxy propyltrimethoxysilane. Specified photo-resists are cinnamates of starch, cellulose and vinyl compounds, alketones with ethylcellulose or acrylates as in U.S.A. Specification 2, 544, 905; azides as in Specification 765, 909; naphthoquinone diazides as in Specification 941, 837 and a condensation product of formaldehyde with a sulphonated aromatic hydroxy compound and then reacted with a diazonium compound as in Specification 941, 835. The photo-resists are used to produce semiconductor devices. In the Examples, a silicon wafer is heated in steam to oxidize the surface and then coated with the photo-resist and organic silane. The material is imagewise exposed and developed in Stoddard solvent. |
