| 摘要 |
<p>Method of producing metal-semiconductor contacts (Schottky contacts) with precisely defined and relatively small surface areas comprising: applying a layer of an insulating material (aluminum oxide or silicon dioxide) onto a semiconductor surface; etching only areas of the insulating material layer corresponding to the desired contact; coating a layer of chromium onto the exposed semiconductor surface areas and on the non-etched insulating material areas and etching only the areas comprised of a top layer of chromium and a bottom layer of insulating material to produce discrete areas of chromium directly on the semiconductor surface. In one embodiment, the so-formed semiconductor having discrete areas of chromium thereon is further treated by coating another layer of an insulating material over the chromium areas and the semiconductor surface areas, etching only the areas of the insulating material layer generally corresponding to the chromium layer areas and applying a layer of aluminum onto the exposed chromium areas for attachment of feed-line or the like directly onto said aluminum layer.</p> |
