| 摘要 |
<p>PURPOSE:To improve a rate of aperture area required for the micronization of a display device by a method wherein a first electrode layer, a first semiconductor layer, a metal layer, a second semiconductor layer, and a second electrode layer are laminated to form a non-linear resistive element, where a barrier is formed at an interface between the first and the second semiconductor layer and the metal layer. CONSTITUTION:A first semiconductor layer 13 of non-doped a-Si:H is formed on a first electrode layer 12 of a Cr layer formed on a glass substrate 11, and a metal layer 14 of Pt is formed thereon. And, a second semiconductor layer 15 of non-doped a-Si:H and a second electrode layer 16 of Cr are successively formed thereon. By these processes, a Schottky barrier is formed at an interface between the first and the second semiconductor layer, 13 and 14, and the metal layer 14, so that Schottky diodes are connected in series and in a reverse direction and show a non-linearity. As this element is vertically constituted, its occupying area is half that of a conventional one and it is improved in a rate of aperture area.</p> |
