WARM-WALL TYPE REACTION CHAMBER PART AND FORMATION OF A HEMI-SPHERICAL GRAIN FILM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a warm-wall type reaction chamber part and also to provide a method for forming a hemi-spherical grain film using the same. SOLUTION: The chamber part includes a reaction chamber 41, a heat insulating means 52 provided to surround the chamber 41, and a susceptor 40 provided so that a semiconductor substrate 44 is placed within the chamber 41. The heat insulating means 52 for being able to prevent heat radiation from the chamber 41 while keeping the temperature within the chamber in a range of about 200 to 500 deg.C is provided to selectively form a hemi-spherical grain(HSG) film on a storage electrode. A step time necessary from formation of an HSG silicone nuclei to formation of the HSG silicone film can be remarkably reduced. Thereby a semiconductor device having the HSFG silicone film can be improved in its productivity.