Non-volatile memory device and manufacturing method thereof

摘要

A non-volatile memory device and a manufacturing method thereof are disclosed. The non-volatile memory device includes a gate insulating film formed on a semiconductor substrate, a floating gate formed on the gate insulating film, a dielectric film comprising a (TaO)1-x(TiO)xN film on the floating gate, and a control gate formed on the dielectric film. Thus, large charge capacitance values can be obtained compared to a similarly sized device using an ONO or Ta2O5 thin film dielectric while simultaneously simplifying the manufacturing process.