| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of trench gate structure and its method for manufacturing. SOLUTION: The semiconductor device includes a gate electrode formed in a groove formed in a semiconductor substrate through a gate insulation film, and a trench gate transistor equipped with a source region and a drain region arranged in the semiconductor substrate in the vicinity of the gate electrode through the gate insulation film, wherein the source electrode is protrudingly formed from the inside of the groove to the outside of the groove, the gate electrode is formed to be misalignment shape in which a displacement portion is formed in the width direction with the inside and the outside of the groove, and the misalignment portion of the gate electrode is arranged so as to be upper than the periphery portion of opening of the groove. COPYRIGHT: (C)2008,JPO&INPIT
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