| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly-integrated semiconductor storage device which sufficiently suppresses bipolar disturbance. SOLUTION: The semiconductor storage device comprises an insulating film 20, a semiconductor layer 30 provided on the insulating film, a source S provided in the semiconductor layer, a drain D provided in the semiconductor layer, a floating body B, which is provided between the source and the drain, is electrically floating, and accumulates or emits carriers to store data, a gate insulating film 40 provided on the floating body, a gate electrode G provided on the gate insulating film, a source-drain insulating film 60 provided on the source and drain, and thinner than the gate insulating film, and a silicide layer 51 provided on the source-drain insulating film. COPYRIGHT: (C)2009,JPO&INPIT
|
