| 摘要 |
1,081,376. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. Oct. 27, 1965 [Oct. 31, 1964], No. 45469/65. Heading H1K. Material is removed from a semi-conductor body to leave a mesa or similar upstanding portion, the sidefaces of which are then masked (e.g. by an oxide layer 9 as shown, Fig. 4) to leave uncovered the whole of the upper face 11 into which an impurity is diffused. A plane PN junction extending across the mesa or similar portion is thereby produced. Either before or after the diffusion process, the space left by the removal of semi-conductor material may be filled with insulating material 10, such as quartz glass, to provide a plane support for conducting paths 12. |
