| 发明名称 |
CLEANING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A cleaning method of semiconductor device is provided to stably secure the cell threshold voltage by forming a second oxide film having uniform thickness. The semiconductor substrate(100) has the element isolation film(102). The mask pattern(104) having the opening is formed on the semiconductor substrate. The mask pattern comprises the oxide layer. The recess portion(R) having the predetermined depth is formed in the active area of the semiconductor substrate. The etching by-product(106) is formed in the surface of the recess portion. The etching by-product comprises the organic compound formed due to the mask pattern. The first oxide film has the uneven thickness due to by-product.</p> |
| 申请公布号 |
KR20090087338(A) |
申请公布日期 |
2009.08.17 |
| 申请号 |
KR20080012717 |
申请日期 |
2008.02.12 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, MI HEE;KIM, JOON HO;PARK, SANG HYOUN |
| 分类号 |
H01L21/304;H01L29/78 |
主分类号 |
H01L21/304 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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