Polierverfahren fuer Halbleitermaterial

摘要

Silicon or germanium crystals are vapourpolished by a stream of hydrogen iodide mixed with hydrogen or helium or a mixture thereof in a polishing chamber 9 through which the gas passes. Hydrogen or hydrogen and helium is passed through a heated packed bed 4 of iodine crystals, and hydrogen iodide is produced from the resulting mixture with iodine vapour in a platinum wool catalyst chamber 8.