发明名称 |
INTEGRATED CIRCUIT PROCESS UTILIZING ORIENTATION DEPENDENT SILICON ETCH |
摘要 |
Orientation-dependent etching is employed in the fabrication of a monolithic semiconductor circuit network to provide electrical isolation and increased packing density, while minimizing collector series resistance and output capacitance. Collector contact to a transistor component is made by the direct metallization of a buried low-resistivity substrate region exposed by the preferential etching operation.
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申请公布号 |
US3659160(A) |
申请公布日期 |
1972.04.25 |
申请号 |
USD3659160 |
申请日期 |
1970.02.13 |
申请人 |
TEXAS INSTRUMENTS INC. |
发明人 |
BENJAMIN JOHNSTON SLOAN JR.;BILLY M. MARTIN;LOYD H. CLEVENGER;ROGER S. DUNN |
分类号 |
H01L21/764;H01L23/535;(IPC1-7):H01L15/00 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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