| 摘要 |
PURPOSE:To obtain a detecting element which is highly sensitive to IR light of a 1.5mu wavelength band in particular by forming a crystalline phosphor layer wherein the specific ratio or over out of the whole cation is Er on ions the surface of an IR light detecting element using the p-n junction of silicon single crystal. CONSTITUTION:A crystalline phosphor layer 3 of phosphors of which >=5atom% out of the whole cation is trivalent Er ions and which have an anti-stokes wavelength conversion function, for example, compsns. of Y0.8Er0.1Yb0.1F3 consisting basically of, for example, YF3, BaY3F or other fluoride compounds of lanthanum group is coated to uniform thickness on the thin P type layer 1 of a silicon single crystal photodetecting element formed with said layer 1 on the surface of an n type layer 2. Thereby, the IR light detecting element which is highly sensitive to 1.5mu IR light 4 is obtd. Further, a filter 5 which allows the transmission of 1.5mu band IR light and absorbs <=mu wavelength completely is provided on the layer 3, so that IR light is detected effectively with no interference of visible light and near IR light. |
