发明名称 ELEMENT DE CIRCUIT RESISTIF ET SON PROCEDE DE FABRICATION
摘要 <p>The current (I) for measurement passes through the resistance formed by the resistive layer (5) deposited on an insulating substrate (1). The latter resides between the injection terminals formed of high conductivity layers (2a,2b). The p.d. (V) developed across the measurement terminals (6,7) spaced along a layer (5) is a direct measure of the current (I). One or more calibrating cuts (12,13) are made down to the substrate in the layer (5) between the terminals (6,7) and from the edge of the layer. These cuts channel the current and are used to accurately set the ratio V:I.</p>
申请公布号 FR2529374(A1) 申请公布日期 1983.12.30
申请号 FR19820011191 申请日期 1982.06.25
申请人 RENIX ELECTRONIQUE 发明人 ALAIN CHAILLOU
分类号 G01R1/20;H01C7/00;H01C17/24;(IPC1-7):01C17/22;01C7/00;01B5/14 主分类号 G01R1/20
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