| 摘要 |
<p>PURPOSE:To improve level difference connecting ability to the next laminated conductive film without damaging low resistivity given through an Al film by specifying an etching process for a multi-layer metallic film. CONSTITUTION:A regist pattern 4 is formed on a substrate 1, Cr film 2 and Al film 3, and only the Al film is etched by phosphoric acid system solution with the regist pattern used as a mask, and only the Cr film is then etched by secondary cerium nitrate ammonium solution with the regist pattern and the etched Al film used as the mask. In addition to that, the side-etching of the Al film is executed so far as 0.5mum or more from the end of the Cr film using phosphoric acid system solution. The regist pattern is finally removed. For example, in a thin film transister matrix in which the individual gate electrode of a thin film transister composed of a gate electrode 13, a source electrode 16, a drain electrode 17, a gate insulating layer 13 and semiconductors 14, 15 on an insulating substrate 11 is connected with the first bus line, and the individual drain electrode with the second bus line, and the individual source electrode with a picture element electrode 18, a multi-layer film wiring body composed in such a way is used as a bus line or the electrode.</p> |
