TRANSFER TRANSISTOR AND LOW-NOISE IMAGE SENSOR POSSESSING IT

摘要

A transfer transistor is provided to use the maximum characteristic of an image sensor by controlling generation of dark current in a photodiode and even the influence of dark electrons upon a transient interval of a transfer transistor in a CMOS image sensor. A p-type doping part is formed between a p-type region of the surface of a photodiode(PD) and a charge transfer channel from the photodiode to a diffusion node, having a different doping pattern from that of the p-type region of the surface of the photodiode. A gate oxide is positioned on the p-type doping part and the change transfer channel. A gate electrode is positioned on the gate oxide. The p-type doping part can be formed by diffusion in the boundary part of a p-type dopant material that is given to a substrate to form the p-type region of the surface of the photodiode.