| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a division method of a wafer whereby the division of the wafer having on its surface a formed grid-like division predetermining line can be performed accurately along the division predetermining line. <P>SOLUTION: The division method of a wafer includes a first alteration-layer forming process for irradiating a laser beam on the wafer along a first alteration predetermining line 21, to form in the inside of the wafer a continuous first alteration layer 210 along the first alteration predetermining line; a second alteration-layer forming process for irradiating a laser beam on the wafer along a second division predetermining line except for the portion intersected by the first division predetermining line, to form in the inside of the wafer a second alteration layer 220 along the second division predetermining line 22 except for the portion intersected by the first division predetermining line; a first division process for applying an external force to the wafer along the first division predetermining line to break along the first division predetermining line the wafer having the formed first alteration layer; and a second division process for applying an external force to the wafer along the second division predetermining line to break along the second division predetermining line the wafer having the formed second alteration layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
