| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multivalued nonvolatile semiconductor storage device that reduces data read time and data write time. <P>SOLUTION: A nonvolatile semiconductor storage device 1000 transmits/receives data by j bits (for example, 8 bits) to/from a data input/output terminal 10. Each of memory cells in a memory cell array 100 holds n bit data corresponding to 2<SP>n</SP>threshold levels. A write data conversion circuit 230 generates write data from bit data input from the same data input/output terminal in a plurality of j bit data sets input at different timing. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
