发明名称 Low temperature sintering ceramic composition for high frequency, method of fabricating the same and electronic component
摘要 A low temperature sintering ceramic composition can be sintered at 850 to 1,000° C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO<SUB>2 </SUB>in total: over 60% to 98.6%; Bi<SUB>2</SUB>O<SUB>3</SUB>: from 1% to under 35%; and Li<SUB>2</SUB>O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO<SUB>2 </SUB>are contained in the molar ratio of from 1:1 to under 1:2.5.
申请公布号 US7300897(B2) 申请公布日期 2007.11.27
申请号 US20050548380 申请日期 2005.09.08
申请人 NIKKO COMPANY 发明人 KIDANI NAOKI;MIZUSHIMA KIYOSHI;TAKIMOTO MIKIO
分类号 C04B35/20;B32B18/00;C04B35/22;H01L23/15;H05K1/03 主分类号 C04B35/20
代理机构 代理人
主权项
地址