| 摘要 |
Provided is directed to an apparatus and method of supplying power in a semiconductor memory device which supplies an external voltage of high level at the beginning operation which current consumption is rapidly increased and then supplies an internal voltage of a target level, but the external voltage is supplied for a longer time in case that the current consumption is increased more when plural pairs of bitlines are selected than when a pair of bitlines is selected, and thus the apparatus comprises the relatively small number of internal voltage generators and also it is capable of improving reliability of a circuit operation.
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