发明名称 |
Vertical charge control semiconductor device |
摘要 |
In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.
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申请公布号 |
US6803626(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020200056 |
申请日期 |
2002.07.18 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
SAPP STEVEN;WILSON PETER H. |
分类号 |
H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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