| 摘要 |
Ferroelectric solid solutions simultaneously containing lead, iron, niobium, bismuth, zirconium, lanthanum, and oxygen are synthesized and sintered at temperatures lower than 1,000 DEG C. Polycrystalline layers and films of such compositions are prepared by radio-frequency sputtering, electron beam evaporation, chemical spray deposition, or centrifuge deposition. Layers of such compositions only a few microns or fractions of a micron thick when on a conductive substrate are used as non-linear elements in logic and memory devices.
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