| 摘要 |
A lateral conduction MOS structure, comprising: a semiconductor substrate of a first conductivity type having an epitaxial semiconductor layer of said first conductivity type disposed thereon; a source layer and a drain layer, said source layer and said drain layer of a second conductivity type; a channel layer disposed between said source layer and said drain layer, said channel having an oxide layer and a gate disposed thereon; characterized in that: a metallized via electrically connects said top surface to said substrate.
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