| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile semiconductor memory in which recessed part can be prevented from being formed at a source line. SOLUTION: A polysilicon film 86 is removed by etching so that the polysilicon film 86 is left on the whole face of a source line formation region 88, and one part of a floating gate is patterned. That is, the regions removed are only removal regions 92, 94, and 96 on an element separation region which are removed by etching. Thus, the polysilicon film 86 and the polysilicon film which is a control gate can be laminated on the source line formation region 88. Therefore, the thickness of the film to be etched on the source line formation region 88 can be made the same as that on a region in which a storage element is formed. At patterning the remaining part of the floating gate and the control gate, a recessed part prevented from being formed due to the excessive etching of the source line formation region 88 is eliminated.
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