| 摘要 |
PROBLEM TO BE SOLVED: To surely reduce the parasitic capacity between metal wiring in a semiconductor device having the metal wiring that is embedded, in an insulating film that is made of a silicon oxide film containing carbon. SOLUTION: A second insulating film 3 that is made of the silicon oxide film containing carbon is formed on a first insulating film 2 on a silicon substrate 1, and a wiring groove 5 is formed in the second insulating film 3. At the wall and bottom parts of the wiring groove 5, a silicon oxide layer 6 is formed, where the silicon oxide layer 6 has a uniform thickness of approximately 20 nm or smaller, and at the same time a high density of 2.0 g/cm3 or higher. At the inside of the silicon oxide layer 6 of the wiring groove 5, metal wiring 7 is embedded.
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