发明名称 PLASMA CVD DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma CVD device in which standing waves are positively utilized in a state of being controllable in an induction coupling type plasma CVD device of an internal electrode system, and the distribution of plasma is satisfactorily controlled and suitable for the formation of a film on a substrate of a large area. SOLUTION: This plasma CVD device is provided with an induction coupling type electrode arranged so as to be confronted with a substrate 16a in a film forming chamber 11. An electrode 12 is formed in such a manner that a linear conductor is folded so as to be involved in the plane with the center point 12a as a standard, and the center point is also constituted as a high-frequency feeding point. By this constitution, desired standing waves are generated, the standing waves are positively utilized, and the distribution of plasma is made better.
申请公布号 JP2000345351(A) 申请公布日期 2000.12.12
申请号 JP19990151435 申请日期 1999.05.31
申请人 ANELVA CORP 发明人 UEDA HITOSHI
分类号 H01L21/205;C23C16/24;C23C16/50;C23C16/509;H05H1/46 主分类号 H01L21/205
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