SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To enhance light emission efficiency and reliability of a gallium nitride compound semiconductor light emitting element. SOLUTION: This semiconductor light emitting element has a p-type electrode 111 constituted of a gallium nitride compound semiconductor and positioned above the light emission region of an active layer 106, and a p-type Al0.1Ga0.9N clad layer 107 in contact with its bottom, and in which a dielectric film 110 for preventing diffusion of an electrode metal consisting of an SiO2 film is arranged between a part of the p-type electrode 111 and the p-type Al0.1Ga0.9N clad layer 107.