| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element wherein the structure of the connection for connecting its upper-layer wiring with its lower-layer wiring is made accurate, and its via hole has no possibility to be damaged due to cracks, etc., also, it has no possibility of the penetration of its conductive material, therefore, it so has no possibility of its current leak as to obtain a high reliability, further, the width of the selection of its insulating material can be made wide, moreover, the various problems generated in its multilayer-wiring forming process which are caused by the limitation of its insulating material are solved too, and furthermore, it has the wiring structure manufactured simply. <P>SOLUTION: The semiconductor element has an upper-layer wiring 6 and a lower-layer wiring 1 and has such a structure that the upper-layer wiring 6 and the lower-layer wiring 1 are connected by a via 3 formed in an interlayer insulating film 4 having a porous structure. Hereupon, the material of an insulating film 7 constituting the layer of the upper-layer wiring 6 so penetrates into the interlayer insulating film 4 present in the peripheries of the via 3 as to form composite regions 5, 8. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
