| 摘要 |
PROBLEM TO BE SOLVED: To form a transistor, in a semiconductor device including a memory section and a logic, which includes gate electrodes with different heights in the logic section without increasing the number of steps. SOLUTION: The semiconductor device has semiconductor regions 1A, 1B, and 1C having a memory section A and a logic section B, a memory transistor 30 having a memory gate electrode 31 formed in memory section A of the semiconductor region through a memory gate insulating film 2, a p-type transistor 40 formed in a first region B1 of the logic section B and having a first gate electrode 41, and an n-type transistor 50 formed in a second region B2 of the logic section B and having a second gate electrode 51. The memory gate electrode 31 includes a first electrode 4 and a second electrode 9, the first gate electrode 41 has the first electrode 4 and the second electrode 9 electrically connected, the second gate electrode 51 is composed of the second electrode 9, and the thickness of a first sidewall insulating film 10 is thicker than that of a second sidewall insulating film 11. COPYRIGHT: (C)2008,JPO&INPIT
|
