| 摘要 |
The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14). |
