| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit etc. that has attained coexistence of the efficiency of noise removal and area efficiency. SOLUTION: In the semiconductor integrated circuit 100, there are provided a first circuit block 101 having a relatively high operating frequency, a second circuit block 102 having a relatively low operating frequency, a first MOS-type decoupling capacitive element F connected to a wire that supplies a power source to the first circuit block and having a relatively small dimension between source and drain, and a second MOS-type decoupling capacitive element A connected to a wire that supplies a power source to the second circuit block and having a relatively large dimension between source and drain compared to that of the first MOS-type decoupling capacitive element. COPYRIGHT: (C)2009,JPO&INPIT
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