FABRICATION METHOD OF PHASE-CHANGE MEMORY DEVICE

摘要

A method for manufacturing a phase change memory device is provided to secure an insulation characteristic between cells by removing a sacrificial layer and a metallic polymer together. A stack structure of a phase change material layer(207) in contact with a lower electrode contact is formed on a semiconductor substrate with a lower electrode contact(203). A sacrificial layer(211) is formed on the overall structure including the stack structure of the phase change material layer. The sacrificial layer in the upper part and sidewall of the stack structure of the phase change material layer is removed by the anisotropic etching process. The lower electrode contact is formed by removing the designated part of the interlayer insulating layer formed on the semiconductor substrate.