| 摘要 |
The present invention is to provide a method to manufacture a magnetic memory device having improved electromagnetic characteristics. The method to manufacture a magnetic memory device according to an embodiment of the present invention includes the steps of: forming a lower magnetic layer, a tunnel barrier layer and an upper magnetic layer on a substrate; forming a magnetic tunnel junction pattern by etching a stacked body including the lower magnetic layer, the tunnel barrier layer and the upper magnetic layer; forming a boron adsorption layer covering the magnetic tunnel junction pattern; and performing thermal treatment so as to adsorb boron included in the upper and lower magnetic layer into the boron adsorption layer. The thermal treatment step is conducted under a gas atmosphere including at least one from hydrogen, oxygen and nitrogen. |
