| 摘要 |
On an area, as an impediment layer(12), a high temperature oxide film or silicon nitride film is formed and on the area where, with photo process, silicon filter will be formed onto a silicon base metal(10), a photoresist pattern is established. And then, using the phtoresist pattern as a mask, a silicon pillars(14) by etching, with ion etching method are formed, by bonding an etching impediment area(12) and a silicon base metal(10) in turn, thus the silicon pillars are separated by the first distance to the direction of beat line and by the second distance to the direction of word line.
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