| 摘要 |
PURPOSE:To eliminate the need for a wide area by mutually connecting polycrystal Si films by a metallic electrode formed at an upper section of an opening part of a silicon oxide film being formed on the Si films. CONSTITUTION:A silicon oxide film 23 and a silicon nitride film 26 are built up to an upper section of a diffusion region 22 on a semiconductor substrate 24, and upper electrodes 21 made of polycrystalline silicon films are formed on the upper sectin. The electrodes 21 are connected mutually by using a metallic electrode 29 at an upper section of an opening part 28 of a silicon oxide film 27 formed on the upper sections of the electrodes 21. Thus, an leading out part of the metallic electrode is not required, and the electrodes 21 can mutually be connected by the electrode 29. Consequently, speed decrease due to wiring resistance can sharply be improved, thereby unnecessitating a wide area. |
