| 摘要 |
PURPOSE:To contrive improving heat dissipation capability by making an insulation substrate with heat-conductive material, heaping up the heat-conductive material and metal wiring material mutually for diffused junction and connecting to a conductor electrically. CONSTITUTION:An SiC substrate 2 wherein Al 1 is filled in a penetrated hole is made diffused junction with an Al wiring 3 and forms a multilayer wiring substrate. On the under surface of the multilayer wiring substrate, a lead wire 4 is attached and on the upper surface, an Si chip 6 is connected with solder 5. A cap 8 is attached to the multilayer wiring substrate with low melting point glass 7. The multilayer wiring substrate which has finished diffused junction has minute crevices which are nearly equal to the thickness of a wiring conductor and has effect of increasing the heat dissipation area of the SiC at the time of forced cooling. |
