发明名称 INSPECTING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remove a DHD type diode having the defect of a contacting system due to an Ag bump shape by measuring electric characteristics after stress application by cooling the DHD diode externally while making the diode generate heat internally. CONSTITUTION:A sample 3 is supplied with electric power from a DC power source 1 and cooled by a cooling spray when generating heat internally. This quenching is performed once or plural times within a predetermined internal heat generation time. The electric characteristics are inspected a feeding time later. In this inspection, the sample 3 is heated by a dryer 5 while the waveform is observed by a curve tracer 4 equipped with a waveform monitor and a power source, thereby inspecting variation of the waveform.
申请公布号 JPS62287170(A) 申请公布日期 1987.12.14
申请号 JP19860131390 申请日期 1986.06.05
申请人 NEC CORP 发明人 SUZUKI FUSAO
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
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