发明名称 Silicon film deposition from mixture of silanes
摘要 A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula: SinH2n+2 (A) wherein n is a positive integer and the compounds of the formula: SimHlXk (B) wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.
申请公布号 US4721664(A) 申请公布日期 1988.01.26
申请号 US19860867624 申请日期 1986.05.27
申请人 CANON KABUSHIKI KAISHA 发明人 SHIMIZU, ISAMU;OGAWA, KYOSUKE;INOUE, EIICHI
分类号 C23C16/24;G03G5/082;H01L31/0392;H01L31/20;(IPC1-7):G03G5/085 主分类号 C23C16/24
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