发明名称 |
Lead frame material and lead frame for semiconductor device |
摘要 |
A lead frame material comprises a base plate consisting of copper or copper alloys, and a protective coating formed on the upper or the both surface of the base plate. The protective coating is composed of at least one metal selected from the group consisting of gold, gold alloy, silver, silver alloy, palladium and palladium alloy, and has a thickness of 10-500 angstrom. The protective coating is formed by means of vapor deposition. It is possible to form an intermediate coating of nickel or nickel alloys between the surface of the base plate and the protective coating, by means of vapor deposition or wet plating. The suitable thickness of the intermediate coating is within the range of 50-20000 angstrom.
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申请公布号 |
US5510197(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19940233460 |
申请日期 |
1994.04.26 |
申请人 |
MITSUBISHI SHINDOH CO., LTD. |
发明人 |
TAKAHASHI, SHUNJI;MASUKAWA, SEIZO;FUTATSUKA, RENSEI;SUGIMOTO, TETSUYA;SUZUKI, TAKESHI;AZUMA, CHUZO;KANDA, YUICHI;FUKATAMI, TAKAO |
分类号 |
C23C14/14;B32B15/01;C23C14/16;H01L21/48;H01L23/495;H01L23/50;(IPC1-7):B32B15/20 |
主分类号 |
C23C14/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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