| 发明名称 |
Etsfoerfarande foer kiselsubstrat |
| 摘要 |
<p>The present invention is for enlarging a freedom of layout including an air bridge pattern and enhancing the availability for various purposes. A mask layer 102 including an air bridge pattern is formed on a (100) plane of a silicon substrate 101, isotropic etching is carried out until a point of intersection between tangents of a peripheral curved plane comes to under the air bridge pattern plane, and then an air bridge 103 is formed by means of anisotropic etching. <IMAGE></p> |
| 申请公布号 |
FI934674(A) |
申请公布日期 |
1994.04.24 |
| 申请号 |
FI19930004674 |
申请日期 |
1993.10.22 |
| 申请人 |
RICOH SEIKI COMPANY, LTD. |
发明人 |
MANAKA, JUNJI |
| 分类号 |
H01L21/306;B81C1/00;G01L9/00;H01L29/84;(IPC1-7):H01L |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
