Method of manufacturing microcrystalline layers and their utilization

摘要

PCT No. PCT/DE94/01158 Sec. 371 Date May 17, 1996 Sec. 102(e) Date May 17, 1996 PCT Filed Sep. 29, 1994 PCT Pub. No. WO95/09435 PCT Pub. Date Apr. 6, 1995The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a first step for producing an amorphous layer of the element in such a way that compounds and hydrogen are passed under conventional CVD conditions through separate access means into the reactor over the substrate, and in that in a second step, a hydrogen treatment takes place, the supply of the process gas flow, the hydrogen flow and the connection of the CVD reactor to the pump being closed at least intermittently during the second step, so that the hydrogen treatment takes place in a closed CVD process (CC-CVD process) with the quantity of hydrogen or element hydrogen compounds located in the reactor.