发明名称 WORDLINE DRIVER CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE
摘要 In the semiconductor memory, the word-line drive circuit to reduce the load to the pump circuit and to avoid malfunctions of the semiconductor consists of word-lines, memory cells for each word-line, a row-decoder and a driver which are connected with word-lines to operate the selected word-line by the input address signal, and a reset circuit to keep a medium voltage level between the 1st and 2nd voltage levels at least one time at the start or stop memory cycle.
申请公布号 KR940002859(B1) 申请公布日期 1994.04.04
申请号 KR19910004068 申请日期 1991.03.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAKJIMA, TAKASHI
分类号 G11C11/413;G11C8/08;G11C11/407;G11C11/408;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C11/407 主分类号 G11C11/413
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