发明名称 Polishing System With In-Line and In-Situ Metrology
摘要 A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.
申请公布号 US2006286904(A1) 申请公布日期 2006.12.21
申请号 US20060467116 申请日期 2006.08.24
申请人 APPLIED MATERIALS, INC. 发明人 SWEDEK BOGUSLAW A.;ADAMS BRET W.;RAJARAM SANJAY;CHAN DAVID A.;BIRANG MANOOCHER
分类号 B24B51/00;B24B37/04;B24B49/12 主分类号 B24B51/00
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