MANUFACTURING METHOD OF FIN-TYPE FIELD EFFECT TRANSISTOR

摘要

A method of manufacturing a fin-type field effect transistor is provided to remove an undercut by etching a sacrificial oxide layer before etching a buried oxide layer. A buried oxide layer(2) made of an insulating material is formed on a Si substrate(1). A single crystalline silicon layer is formed on the buried oxide layer. A fin-shaped protrusion is formed by dry-etching selectively a single crystalline silicon layer until the underlying buried oxide layer is exposed. A sacrificial oxide layer is formed by oxidizing a surface of the protrusion including a damage. A fin(7) having a clean surface is formed by removing the sacrificial oxide layer by performing an etch process. An etching speed of the sacrificial oxide layer is higher than an etching speed of the buried oxide layer during the etch process.