发明名称 |
Substrate recycling method and recycled substrate |
摘要 |
Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface. |
申请公布号 |
US9373496(B2) |
申请公布日期 |
2016.06.21 |
申请号 |
US201314085876 |
申请日期 |
2013.11.21 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Choi Joo Won;Kim Chang Yeon;Heo Jeong Hoon;Kim Young Wug;Hong Su Yeon;Ryu Sang Wan |
分类号 |
H01L21/302;H01L21/02;H01L29/20;H01L33/00 |
主分类号 |
H01L21/302 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A substrate recycling method, the method comprising:
separating a substrate comprising a first surface from an epitaxial layer; performing a first etching of the first surface using electrochemical etching; and performing, after the first etching, a second etching of the first surface using chemical etching or dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface, wherein: the first surface comprises a sacrificial layer; and the substrate further comprises an etching stop layer disposed under the sacrificial layer. |
地址 |
Ansan-si KR |