| 摘要 |
A reference voltage generator has a depletion mode MOS transistor of a first conductivity type for supplying a constant current flow, and an enhancement mode MOS transistor of the first conductivity type having a diode connection to the depletion mode MOS transistor for generating a reference voltage based on a constant current supplied by the depletion mode MOS transistor. The enhancement mode MOS transistor has a mobility substantially equal to a mobility of the depletion mode MOS transistor such that the enhancement mode MOS transistor and the depletion mode MOS transistor have substantially equal temperature characteristics. |
