| 摘要 |
Provided is a highly integrated semiconductor device in which transistors are stacked. A semiconductor device provided with: a first first-conductivity-type semiconductor layer formed on a semiconductor substrate; a first columnar semiconductor layer formed on the semiconductor layer, in which are formed in the stated order from the substrate side a second first-conductivity-type semiconductor layer, a first body region, a third first-conductivity-type semiconductor layer, a fourth first-conductivity-type semiconductor layer, a second body region, a fifth first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a third body region, and a second second-conductivity-type semiconductor layer; a first output terminal connecting the fifth first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; a second columnar semiconductor layer formed on the first output terminal, in which are formed in the stated order from the substrate side a third second-conductivity-type semiconductor layer, a fourth body region, and a fourth second-conductivity-type semiconductor layer; and gates corresponding to each body region. |
