发明名称 SEMICONDUCTOR INTEGRATING CIRCUIT
摘要 PURPOSE:To provide the PNP and NPN transistors, featuring outstanding characteristics, on one chip with a high yield through the application of a relatively simple production process, as well as to prevent the occurrence of the parasitic effect.
申请公布号 JPS51123579(A) 申请公布日期 1976.10.28
申请号 JP19750048191 申请日期 1975.04.22
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SAWAZAKI HAJIME
分类号 H01L21/331;H01L21/761;H01L21/8228;H01L27/082;H01L29/73 主分类号 H01L21/331
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