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发明名称
SEMICONDUCTOR INTEGRATING CIRCUIT
摘要
PURPOSE:To provide the PNP and NPN transistors, featuring outstanding characteristics, on one chip with a high yield through the application of a relatively simple production process, as well as to prevent the occurrence of the parasitic effect.
申请公布号
JPS51123579(A)
申请公布日期
1976.10.28
申请号
JP19750048191
申请日期
1975.04.22
申请人
TOKYO SHIBAURA ELECTRIC CO
发明人
SAWAZAKI HAJIME
分类号
H01L21/331;H01L21/761;H01L21/8228;H01L27/082;H01L29/73
主分类号
H01L21/331
代理机构
代理人
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